XP162A11C0PR-G
■GENERAL DESCRIPTION
The XP162A11C0PR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible
■FEATURES
Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V
: Rds(on) = 0.28Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage : -4.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Fre
