XP161A1355PR-G
■GENERAL DESCRIPTION
The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible
■FEATURES
Low On-State Resistance : Rds (on)= 0.05Ω@ Vgs = 4.5V
: Rds (on)= 0.07Ω@ Vgs = 2.5V
: Rds (on)= 0.15Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
