XP161A1265PR-G
■GENERAL DESCRIPTION
The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■FEATURES
Low On-State Resistance : Rds(on)=0.055Ω@ Vgs=4.5V
: Rds(on)=0.095Ω@ Vgs=2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 2.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
