XP151A13A0MR-G
■GENERAL DESCRIPTION
The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible
■FEATURES
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.14Ω@ Vgs = 2.5V
: Rds(on) = 0.25Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
