• - 交流-直流(AC-DC)控制器和稳压器
• - 直流-直流(DC-DC)控制器、转换器和稳压器
• - 电压和电流管理
• - 通讯IC
• - 驱动器
• - 热管理

• - 时钟及数据分配
• - 标准逻辑

• - 放大器和比较器
• - 模拟开关
• - 数字电位计
• - 接口
• - EMI和RFI滤波器

• - EEPROM存储器
• - 非易失性只读存储器(NVRAM)
• - SRAM存储器

说明

The UCC27200/1 family of high frequency N-Channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-Channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1-ns between the turn-on and turn-off of each other.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

Two versions of the UCC27200 are offered.

特性

• Specified from -40 °C to 140 °C
• Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration
• Maximum Boot Voltage 120 V
• Maximum VDD Voltage 20 V
• On-Chip 0.65-V VF, 0.6-Ω RD Bootstrap Diode
• Greater than 1 MHz of Operation
• 20-ns Propagation Delay Times
• 3-A Sink, 3-A Source Output Currents
• 8-ns Rise/7-ns Fall Time with 1000-pF Load
• 1-ns Delay Matching
• Under Voltage Lockout for High-Side and Low-Side Driver
• APPLICATIONS
  • Power Supplies for Telecom, Datacom, and Merchant Markets
  • Half-Bridge Applications and Full-Bridge Converters
  • Isolated Bus Architecture
  • Two-Switch Forward Converters
  • Active-Clamp Forward Converters
  • High Voltage Synchronous-Buck Converters
  • Class-D Audio Amplifiers