二极管

USB

三极管

可控硅(晶闸管)

场效应管(MOSFET)

集成电路

连接器

LED系列产品

电感器

继电器

传感器

电容器

电阻器

保护器件

光电器件

压电晶体

开关原件

功率模块

特性

• Low and Flat ON-State Resistance (r_on) Characteristics Over Operating Range (r_on = 3 Typ)
• 0- to 10-V Switching on Data I/O Ports
• Bidirectional Data Flow With Near-Zero Propagation Delay
• Low Input/Output Capacitance Minimizes Loading and Signal Distortion (C_io(OFF) = 20 pF Max, B Port)
• V_CC Operating Range From 4.75 V to 5.25 V
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human-Body Model
    (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog Applications
• APPLICATIONS
  • PCI Interface
  • Differential Signal Interface
  • Memory Interleaving
  • Bus Isolation
  • Low-Distortion Signal Gating

DESCRIPTION/ORDERING INFORMATION

The TS5N118 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N118 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The TS5N118 is a 1-of-8 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S0, S1, S2) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.