The TPS28225 and TPS28226 are high-speed drivers for N-channel complimentary driven power MOSFETs with adaptive dead-time control. These drivers are optimized for use in variety of high-current one and multi-phase dc-to-dc converters. The TPS28225/6 is a solution that provides highly efficient, small size low EMI emmissions.
The performance is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-
impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in half-bridge configuration.
Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
Wide Power System Train Input Voltage: 3 V Up to 27 V
Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
Capable Drive MOSFETs with ≥40-A Current per Phase
High Frequency Operation: 14-ns Propagation Delay and
10-ns Rise/Fall Time Allow FSW - 2 MHz
Capable Propagate <30-ns Input PWM Pulses
Low-Side Driver Sink On-Resistance (0.4 )
Prevents dV/dT Related Shoot-Through Current
3-State PWM Input for Power Stage Shutdown
Space Saving Enable (input) and Power Good (output) Signals on Same Pin
Thermal Shutdown
UVLO Protection
Internal Bootstrap Diode
Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
High Performance Replacement for Popular 3-State Input Drivers
APPLICATIONS
- Multi-Phase DC-to-DC Converters with Analog or Digital Control
- Desktop and Server VRMs and EVRDs
- Portable/Notebook Regulators
- Synchronous Rectification for Isolated Power Supplies
