• - 交流-直流(AC-DC)控制器和稳压器
• - 直流-直流(DC-DC)控制器、转换器和稳压器
• - 电压和电流管理
• - 通讯IC
• - 驱动器
• - 热管理

• - 时钟及数据分配
• - 标准逻辑

• - 放大器和比较器
• - 模拟开关
• - 数字电位计
• - 接口
• - EMI和RFI滤波器

• - EEPROM存储器
• - 非易失性只读存储器(NVRAM)
• - SRAM存储器

说明

TPS22921, TPS22922, and TPS22922B are ultra-low r_ON load switches with controlled turn on. TPS22921/2/2B contain an ultra-low r_ON P-channel MOSFET that can operate over an input voltage range of 0.9 V to 3.6 V. The switch is controlled by an on/off input (ON), which is capable of interfacing directly with low-voltage control signals. In TPS22922 and in TPS22922B, a 120- on-chip load resistor is added for output quick discharge when switch is turned off. The rise time (slew rate) of the device is internally controlled in order to avoid inrush current: TPS22921 and TPS22922 feature a 30 µs rise time whereas TPS22922B is 200 µs.

TPS22921, TPS22922, and TPS22922B feature ultra low quiescent and shutdown current and are available in space-saving 6-terminals wafer-chip-scale packages (WCSP: YZP with 0.

特性

• Input Voltage: 0.9 V to 3.6 V
• Ultra-Low ON Resistance
  • r_ON = 14 m at V_IN = 3.6 V
  • r_ON = 20 m at V_IN = 2.5 V
  • r_ON = 33 m at V_IN = 1.8 V
  • r_ON = 67 m at V_IN = 1.2 V
  • r_ON = 116 m at V_IN = 1.0 V
• 2-A Maximum Continuous Switch Current
• Ultra-Low Quiescent Current: 78 nA at 1.8 V
• Ultra-Low Shutdown Current: 35 nA at 1.8 V
• Low Threshold Control Input Enable the use of
  1.2V/1.8V/2.5V/3.3V Logic
• Controlled Slew Rate to Avoid Inrush Currents
  • TPS22921 and TPS22922: 30 µS
  • TPS22922B: 200 µS
• ESD Performance Tested Per JESD 22
  • 3000-V Human-Body Model
    (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Six Terminal Wafer-Chip-Scale Package
  • 0.9 mm × 1.4 mm, 0.5 mm Pitch,
    0.5 mm Height
  • 0.8 mm × 1.2 mm, 0.4 mm Pitch,
    0.5 mm Height