品牌索引 产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
特性
DESCRIPTION/ORDERING INFORMATIONThe TPD2E009 provides 2 ESD clamp circuits with flow-through pin mapping for ease of board layout. This device has been designed to protect sensitive components which are connected to ultra high-speed data and transmission lines. The TPD2E009 offers protection from stress caused by ESD (electrostatic discharge). This device also offers 5 A (8/20 µs) peak pulse current ratings per IEC 61000-4-5 (lightning) specification. The monolithic silicon technology allows matching between the differential signal pairs. The less than differential 0.05-pF capacitance ensures that the differential signal distortion due to added ESD clamp remains minimal. The 0.7-pF line capacitance is suitable for high-speed data rate (in excess of 6 Gbps). The TPD2E009 conforms to IEC61000-4-2 (Level 4) ESD protection. The DRT (1 mm × 1 mm) package is offered for space-saving portable applications. The industry standard DBZ (2.4 mm × 2.9 mm) package offers additional flexibility in the board layout for the system designer. The TPD2E009 is characterized for operation over ambient air temperature range of –40°C to 85°C. |