品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍 TPD1032F Features
* Two built-in power IC chips with a new structure combining a 2 control block and a vertical power MOSFET (L -π-MOS) on each chip. * Can directly drive a power load from a CMOS or TTL logic. * Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). * Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C) * Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C) * Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40～110°C) * 8-pin SOP package for surface with embossed-tape packing. |
