品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
TLP705 consists of a GaA?As light emitting diode and a integrated photodetector. This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8pin DIP and has suited the safety standard reinforced insulation class. So mounting area in safety standard required equipment can be reduced. TLP705 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs. * Peak output current : ±0.45 A (max) * Operating frequency : 250kHz (max) * Guaranteed performance over temperature : -40 to 100°C * Supply current : 3mA (max) * Power supply voltage : 10 to 20 V * Threshold input current : IFLH = 8 mA (max) * Switching time (tpLH / tpHL) : 200 ns (max) * Common mode transient immunity :±10 kV/μs(min) * Isolation voltage : 5000 Vrms(min) * UL Recognized :UL1577, File No.E67349 |
