TLP705F
TLP705F consists of a GaA?As light emitting diode and a integrated
photodetector.
This unit is 6-lead SDIP package. TLP705F is 50% smaller than 8PIN DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705F is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705F is capable of “direct” gate drive of lower Power IGBTs.
Absolute Maximum ratings and electrical characteristics are the same as
The TLP705 technical data sheets.
* Peak output current : ±0.45 A (max)
* Operating frequency : 250kHz (max)
* Guaranteed performance over temperature : -40 to 100°C
* Supply current : 3mA (max)
* Power supply voltage : 10 to 20 V
* Threshold input current : IFLH = 8 mA (max)
* Switching time (tpLH / tpHL) : 200 ns (max)
* Common mode transient immunity : ±10 kV/μs(min)
* Isolation voltage : 5000 Vrms(min)
* UL Recognized :UL1577, File No.E67349
