品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
photodetector. This unit is 6-lead SDIP package. The TLP701F is 50% smaller than the 8-pin DIP and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring safety standard certification. The TLP701F is suitable for gate driving circuits for IGBTs or power MOSFETs. In particular, the TLP701F is capable of “direct” gate driving of low-power IGBTs. Absolute Maximum ratings and electrical characteristics are the same as The TLP701 technical data sheets. * Peak output current : ±0.6 A (max) * Guaranteed performance over temperature : -40 to 100°C * Supply current : 2 mA (max) * Power supply voltage : 10 to 30 V * Threshold input current : IFLH = 5 mA (max) * Switching time (tpLH / tpHL) : 700 ns (max) * Common mode transient immunity : ±10 kV/μs (min) * Isolation voltage : 5000 Vrms (min) |
