品牌索引 产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍 TLP591B The TOSHIBA TLP591B consists of an aluminum gallium arsenide
infrared emitting diode optically coupled to a series-connected photo-diode array in a six-lead plastic DIP package. The TLP591B is suitable for MOS FET gate drivers. The TLP591B has an internal shunt resistor to optimize switching speed. * UL recognized: UL1577, file no. E67349 |