品牌索引 产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP523-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP523-4 provide four isolated channels per package. * Current transfer ratio: 500% (min.) (IF = 1 mA) * Isolation voltage: 2500 Vrms (min.) * Collector-emitter voltage: 55 V (min.) * Leakage current: 10μA (max.) (Ta = 85°C) * UL recognized: UL1577, file no. E67349 |