品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs. * Peak output current: ±0.6 A (max) * Guaranteed performance over temperature: -40 to 100°C * Supply current: 2 mA (max) * Power supply voltage: 10 to 30 V * Threshold input current : IF = 5 mA (max) * Switching time (tpLH/tpHL) : 700 ns (max) * Common mode transient immunity: 10 kV/μs * Isolation voltage: 3750 Vrms * Option(D4) VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK Highest Permissible Over Voltage : 4000VPK |
