The TOSHIBA TLP351F consists of a GaA?As light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351F is suitable for gate driving circuit of IGBT or power MOSFET.
Especially TLP351F is capable of “direct” gate drive of lower Power
IGBTs.
Absolute maximum ratings and electrical characteristics are the same as
TLP351 technical datasheet.
* Peak output current: ±0.6 A (max)
* Guaranteed performance over temperature: -40 to 100°C
* Supply current: 2 mA (max)
* Power supply voltage: 10 to 30 V
* Threshold input current : IF = 5 mA (max)
* Switching time (tpLH/tpHL) : 700 ns (max)
* Common mode transient immunity: 10 kV/μs
* Isolation voltage: 3750 Vrms
* Construction mechanical rating
* Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 1140VPK
Highest Permissible Over Voltage : 6000VPK
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
