The TOSHIBA TLP350F consists of a GaA?As light-emitting diode and
an integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350F is suitable for gate driving IGBTs or power MOSFETs.
Absolute maximum ratings and electrical characteristics are the same as
TLP350technical datasheet.
* Peak output current: IO = ±2.5A (max)
* Guaranteed performance over temperature: -40 to 100°C
* Supply current:ICC = 2 mA (max)
* Power supply voltage: VCC = 15 to 30 V
* Threshold input current : IFLH = 5 mA (max)
* Switching time (tpLH/tpHL) : 500 ns (max)
* Common mode transient immunity: 15 kV/μs
* Isolation voltage: 3750 Vrms
* UL Recognized : UL1577,File No.E67349
* Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 1140VPK
Highest Permissible Over Voltage : 6000VPK
