品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
gallium arsenide infrared emitting diode optically coupled to a triac-output photocoupler featuring a zero-cross voltage and is housed in a six-lead plastic DIP package. All parameters are tested to the specification of the TLP3061(S) TLP3062(S) and TLP3063(S), including test conditions and ratings. * Peak Off-state voltage: 600 V (min) * Trigger LED current: 15 mA (max) (TLP3061F(S)) 10 mA (max) (TLP3062F(S)) 5 mA (max) (TLP3063F(S)) * On-state current: 100 mA (max) * Isolation voltage: 5000 Vrms (min) * UL recognized: UL1577, File No. E67349 * SEMKO approved: EN60065 EN60950-1 EN60335-1, File No.712796 * BSI Approved: BS EN60065:2002, File No.8385 BS EN60950-1:2006, File No.8386 * Option (D4) type VDE approved: DIN EN60747-5-2 Approved No. 40009302 Maximum operating insulation voltage: 1140 VPK Maximum permissible overvoltage: 8000 VPK |
