品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
gallium arsenide infrared emitting diode optically coupled to a photo-triac in a six-lead plastic DIP. Peak Off-state voltage: 400 V (min) Trigger LED current: 15 mA (max) (TLP3021F(S)) 10 mA (max) (TLP3022F(S)) 5 mA (max) (TLP3023F(S)) On-state current: 100 mA (max) Isolation voltage: 5000 Vrms (min) UL recognized: UL1577, File No.E67349 SEMKO approved: EN60065 EN60950-1 EN60335-1, File No.813274 BSI approved: BS EN60065:2002, File No.8385 BS EN60950-1:2006, File No.8386 Option (D4) type VDE approved: DIN EN60747-5-2 Approved No. 40009302 Maximum operating insulation voltage: 1140 VPK Maximum permissible over voltage: 8000 VPK Note: When ordering an EN60747-5-2 approved device, "Option (D4)" should be designated. |
