品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
gallium arsenide infrared emitting diode. TLP285-4 is housed in the SOP16 package, very small and thin coupler. Since TLP285-4 are guaranteed wide operating temperature (Ta=-55 to 110 ?C) and high isolation voltage (3750Vrms), it’s suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) Rank GB : 100% (min) Isolation Voltage : 3750 Vrms (min) Guaranteed performance over -55 to 110 ?C UL Recognized : UL1577 , File No. E67349 cUL Recognized : CSA Component Acceptance Service No.5A BSI (under application) : BS EN 60065: 2002, : BS EN 60950-1: 2006 Option (V4) VDE approved : EN60747-5-2 Maximum operating insulation voltage : 707 Vpk Highest permissible over voltage : 6000 Vpk |
