品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
|
产品介绍
an integrated photodetector. This unit is 8-lead DIP package. TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A) * Input threshold current: IF = 5mA (max.) * Supply current: 11mA (max.) * Supply voltage: 10~35V * Output peak current: ±0.4A (max.) * Switching time: tpHL, tpLH = 1μs (max.) * Isolation voltage: 2500Vrms(min.) * UL recognized: UL1577, file no. E67349 * Option (D4) type VDE approved: DIN EN 60747-5-2, certificate no. 40011913 Maximum operating insulation voltage: 1140VPK Highest permissible over voltage: 6000VPK |
