品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
integrated photodetector. This unit is 8-lead DIP. TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET. Input Threshold Current : IF=5mA(max) Supply Current(ICC) : 11mA(max) Supply Voltage(VCC) : 10~35V Output Current(IO) : ±2.0A(max) Switching Time(tpLH/tpHL) : 0.5μs(max) Isolation Voltage : 2500Vrms UL Recognized : UL1577,File No.E67349 Option(D4) VDE Approved : DIN EN 60747-5-2 Certificate No.40011913 Maximum Operating Insulation Voltage : 630VPK Highest Permissible Over Voltage : 4000VPK |
