品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. * Input threshold current: IF=5mA(max.) * Supply current (ICC): 11mA(max.) * Supply voltage (VCC): 10-35V * Output current (IO): ±1.5A (max.) * Switching time (tpLH/tpHL): 0.5μs(max.) * Isolation voltage: 2500Vrms(min.) * UL recognized: UL1577, file No.E67349 * Option(D4) VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK Highest Permissible Over Voltage : 4000VPK |
