品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
optically coupled to an integrated photodetector and is housed in an 8-pin DIP package. The TLP250F(INV) is suitable for gate driving circuitry of IGBTs or power MOSFETs. Absolute maximum ratings and electrical characteristics are the same as those of the TLP250(INV) and listed in its datasheet. * Input threshold current: IF = 5 mA (max) * Supply current : 11 mA (max) * Supply voltage : 10 V to 35 V * Output current : ±1.5 A (max) * Switching time : tpHL, tpLH = 0.5 μs (max) * Isolation voltage : 2500 Vrms (min) * UL recognized : UL1577, file no. E67349 * Option (D4) type VDE approved: DIN EN 60747-5-2, certificate No. 40011913 Maximum operating insulation voltage: 1140 VPK Maximum permissible overvoltage: 6000 VPK |
