品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
consists of GaA?As infrared light emitting diodes and integrated high-gain, high-speed photodetectors. Since the TLP2118E contains two photocouplers in the SO8 package, it saves board space. The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity of ±15 kV/μs. Inverter logic type (Open collector output) Package: SO8 Guaranteed performance over -40 to 100°C Power supply voltage: 4.5 to 5.5 V Input threshold current: I = 5.0 mA (max) FH Propagation delay time t /t : 75 ns (max) pHL pLH Common-mode transient immunity: ±15 kV/μs (min) Isolation voltage: 2500 Vrms (min) UL recognized UL1577, File No.E67349 cUL recognized CSA Component Acceptance Service No. 5A, File No.E67349 |
