品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
for surface mount assembly. TLP181 consist of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. Since TLP181 is smaller than DIP package, it’s suitable for high-density surface mounting applications such as programmable controllers * Collector-emitter voltage: 80V (min) * Current transfer ratio: 50% (min) Rank GB: 100% (min) * Isolation voltage: 3750Vrms (min) * Operation Temperature:-55 to 110 ?C * Safety Standards UL recognized: UL1577, File No. E67349 cUL recognized: CSA Component Acceptance Service No. 5A File No.E67349 * BSI approved: BS EN60065:2002, certificate No.8285 BS EN60950-1:2006 certificate No.8286 Option (V4) type VDE approved : EN60747-5-2 Maximum Operating Insuration Voltage: 565 Vpk Highest Permissible Overvoltage: 6000 Vpk (Note) : When a EN60747-5-2 approved type is needed, Please designate “Option(V4)” |
