品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
integrated high gain, high-speed photodetectors. The TLP151 is housed in the SO6 package. The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity of ±15 kV/μs. TLP151 is suitable for direct gate driving circuit for IGBTs or power MOSFETs. Buffer logic type (Totem pole output) Package type: SO6 Peak Output Current : I = 0.6A (max) OP ± Guaranteed performance over temperature: -40 to 125℃ Power supply voltage: 10 to 30 V Threshold Input Current: I = 5.0 mA (max) FLH Propagation delay time : t / t = 700ns (max) pLH pHL Common mode transient immunity : ±15kV/μs （min） Isolation voltage : 3750 V (min) rms UL under application : UL1577, File No.E67349 c-UL under application :CSA Component Acceptance Service No. 5A, File No.E67349 Option(V4) VDE under application : EN60747-5-2 Maximum operating insulation voltage : 707 Vpk Highest permissible over voltage : 6000 Vpk (Note) When a EN60747-5-2 approved type is needed, Please designate the “option(V4)” |
