品牌索引 产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting diode, optically coupled to a darlington photo transistor with an integral base-emitter resistor, and provides 300V VCEO. * Collector-emitter voltage: 300 V (min.) * Current transfer ratio: 1000% (min.) * Isolation voltage: 2500Vrms (min.) * UL recognized: UL1577, file no. E67349 * BSI approved: BS EN60065:2002, certificate no.8927 BS EN60950-1:2002, certificate no.8928 |