二极管

USB

三极管

可控硅(晶闸管)

场效应管(MOSFET)

集成电路

连接器

LED系列产品

电感器

继电器

传感器

电容器

电阻器

保护器件

光电器件

压电晶体

开关原件

功率模块

特性

• Controlled Baseline
  • One Assembly/Test Site, One Fabrication Site
• Extended Temperature Performance of –55°C to 125°C
• Enhanced Diminishing Manufacturing Sources (DMS) Support
• Enhanced Product-Change Notification
• Qualification Pedigree⁽¹⁾
• Supports 5-V V_CC Operation
• Input and Open-Drain Output Accept
  Voltages up to 5.5 V
• Max t_pd of 5.7 ns at 3.3 V
• Low Power Consumption, 10-µA Max I_CC
• ±24-mA Output Drive at 3.3 V
• I_off Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Protection Exceeds JESD 22
  • 2000-V Human-Body Model (A114-A)
  • 200-V Machine Model (A115-A)
  • 1000-V Charged-Device Model (C101)

⁽¹⁾ Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

DESCRIPTION/ORDERING INFORMATION

This single buffer/driver is designed for 1.65-V to 5.5-V V_CC operation.

The output of the SN74LVC1G07 device is open drain and can be connected to other open-drain outputs to implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 32 mA.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.