• - 交流-直流(AC-DC)控制器和稳压器
• - 直流-直流(DC-DC)控制器、转换器和稳压器
• - 电压和电流管理
• - 通讯IC
• - 驱动器
• - 热管理

• - 时钟及数据分配
• - 标准逻辑

• - 放大器和比较器
• - 模拟开关
• - 数字电位计
• - 接口
• - EMI和RFI滤波器

• - EEPROM存储器
• - 非易失性只读存储器(NVRAM)
• - SRAM存储器

说明

Each circuit functions as a NAND gate or inverter, but because of the Schmitt action, it has different input threshold levels for positive-going (V_T+) and for negative-going (V_T-) signals. The hysteresis or backlash, which is the difference between the two threshold levels (V_T+ - V_T-), is typically 800 millivolts.

These circuits are temperature-compensated and can be triggered from the slowest of input ramps and still give clean, jitter-free output signals.

特性

• Functionally and Mechanically Identical to 'LS13, 'LS14, and 'LS132, Respectively
• Improved Line-Receiving Characteristics
• P-N-P Inputs Reduce System Loading
• Excellent Noise Immunity with Typical Hysteresis of 0.8 V