• - 交流-直流(AC-DC)控制器和稳压器
• - 直流-直流(DC-DC)控制器、转换器和稳压器
• - 电压和电流管理
• - 通讯IC
• - 驱动器
• - 热管理

• - 时钟及数据分配
• - 标准逻辑

• - 放大器和比较器
• - 模拟开关
• - 数字电位计
• - 接口
• - EMI和RFI滤波器

• - EEPROM存储器
• - 非易失性只读存储器(NVRAM)
• - SRAM存储器

说明

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

特性

• BiCMOS Design Substantially Reduces I_CCZ
• Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
• Specifically Designed to Drive MOS DRAMs
• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
• Flow-Through Architecture Optimizes PCB Layout
• Power-Up High-Impedance State
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
• Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)