• - 交流-直流(AC-DC)控制器和稳压器
• - 直流-直流(DC-DC)控制器、转换器和稳压器
• - 电压和电流管理
• - 通讯IC
• - 驱动器
• - 热管理

• - 时钟及数据分配
• - 标准逻辑

• - 放大器和比较器
• - 模拟开关
• - 数字电位计
• - 接口
• - EMI和RFI滤波器

• - EEPROM存储器
• - 非易失性只读存储器(NVRAM)
• - SRAM存储器

说明

This SN74BCT2241 is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. Together with the ’BCT2240 and ’BCT2244 devices, this device provides the choice of selected combinations of inverting and noninverting outputs, symmetrical active-low output-enable (OE)\ inputs, and complementary OE and (OE)\ inputs. This device features high fan-out and improved fan-in.

To ensure the high-impedance state during power up or power down, (OE)\ should be tied to V_CC through a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

特性

• Operating Voltage Range of 4.5 V to 5.5 V
• State-of-the-Art BiCMOS Design Significantly Reduces I_CCZ
• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required
• 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
• ESD Protection Exceeds JESD 22
  • 2000-V Human-Body Model (A114-A)