二极管

USB

三极管

可控硅(晶闸管)

场效应管(MOSFET)

集成电路

连接器

LED系列产品

电感器

继电器

传感器

电容器

电阻器

保护器件

光电器件

压电晶体

开关原件

功率模块

特性

• Controlled Baseline
  • One Assembly/Test Site, One Fabrication Site
• Enhanced Diminishing Manufacturing Sources (DMS) Support
• Enhanced Product-Change Notification
• Qualification Pedigree⁽¹⁾
• Available in the Texas Instruments NanoStar™ and NanoFree™ Packages
• Low Static-Power Consumption (I_CC = 0.9 µA Max)
• Low Dynamic-Power Consumption (C_pd = 4.4 pF Typ at 3.3 V)
• Low Input Capacitance (C_I = 1.5 pF)
• Low Noise — Overshoot and Undershoot <10% of V_CC
• I_off Supports Partial-Power-Down Mode Operation
• Includes Schmitt-Trigger Inputs
• Wide Operating V_CC Range of 0.8 V to 3.6 V
• Optimized for 3.3-V Operation
• 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
• t_pd = 5.1 ns Max at 3.3 V
• Suitable for Point-to-Point Applications
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
• 2000-V Human-Body Model (A114-B, Class II)