• - 交流-直流(AC-DC)控制器和稳压器
• - 直流-直流(DC-DC)控制器、转换器和稳压器
• - 电压和电流管理
• - 通讯IC
• - 驱动器
• - 热管理

• - 时钟及数据分配
• - 标准逻辑

• - 放大器和比较器
• - 模拟开关
• - 数字电位计
• - 接口
• - EMI和RFI滤波器

• - EEPROM存储器
• - 非易失性只读存储器(NVRAM)
• - SRAM存储器

说明

The ’AHCT367 devices are designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. These devices are organized as dual 4-line and 2-line buffers/drivers with active-low output-enable (1OE\ and 2OE\) inputs. When OE\ is low, the device passes noninverted data from the A inputs to the Y outputs. When OE\ is high, the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

特性

• Inputs Are TTL-Voltage Compatible
• True Outputs
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Protection Exceeds JESD 22
  • 2000-V Human-Body Model (A114-A)
  • 200-V Machine Model (A115-A)
  • 1000-V Charged-Device Model (C101)