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首 页 > 新闻动态 > 公司新闻 > 供应 IRF1010ESTRLPBF 场效应管 现货库存 供应 IRF1010ESTRLPBF 场效应管 现货库存Description
®
Advanced HEXFET
Power MOSFETs from International
D
Rectifier utilize advanced processing techniques to
S
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because of its
2
D
Pak
TO-262
low internal connection resistance and can dissipate up to
IRF1010ES
IRF1010EL
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
 IRF1010ESTRLPBF |
