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首 页 > 新闻动态 > 公司新闻 > 供应 IRFR120NTPBF IR TO-252 快速切换 供应 IRFR120NTPBF IR TO-252 快速切换Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. |
