品牌索引 产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
|
首 页 > 新闻动态 > 行业资讯 > 供应 IRFB23N15DPBF IR TO-220 国际整流器 供应 IRFB23N15DPBF IR TO-220 国际整流器Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note TO-220AB l Fully Characterized Avalanche Voltage IRFB23N15D and Current = 100°C IDM PD @TA 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, or M3 screw Telecom 48V input DC-DC Active Clamp Reset Forward ConverterParameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 3.0 Typ. 0.18 Max. Units Conditions V VGS = 250µA V/°C Reference 1mA 0.090 VGS 5.5 V VDS = VGS, 250µA 25 VDS = 150V, VGS µA 250 VDS = 120V, VGS 150°C 100 VGS nA -100 VGS = -30V gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 Typ. Max. Units Conditions S VDS 14 nC VDS 120V 29 VGS = 10V, VDD = 5.1 VGS = 10V VGS = 0V VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS = 1.0MHz VGS = 0V, VDS to 120V EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche EnergyRJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Conditions D MOSFET symbol 23 showing the A G integral reverse 92 S p-n junction diode. = 14A, VGS 1.2 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |