Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12m
= 25°C Continuous Drain Current, VGS = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM
PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount, steady state)
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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