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Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use

High Frequency Buck Converters for Computer Processor Power
Very Low RDS(on) Fully Characterized Avalanche Voltage and Current

Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range

RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB mount)*

* When mounted on 1" square PCB or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994

Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 Static Drain-to-Source On-Resistance Gate Threshold Voltage 1.0 Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Typ. 6.3 9.8 Max. Units Conditions V VGS = 250µA V/°C Reference 1mA 9.0 VGS m 13.5 VGS 3.0 V VDS = VGS, 250µA 20 VDS = 16V, VGS µA 100 VDS = 16V, VGS 125°C 200 VGS nA -200 VGS = -16V

gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 42 Typ. Max. Units Conditions S VDS 28.4A nC VDS = 10V VGS 4.5V 24 VGS = 0V, VDS = 10V VDD = 1.8 VGS = 4.5V VGS = 0V VDS = 1.0MHz

Single Pulse Avalanche Energy Avalanche Current

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Charge Time Charge

Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. = 35.5A, VGS = 35.5A, VGS 35.5A, VR=20V di/dt 35.5A, VR=20V di/dt = 100A/µs