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首 页 > 新闻动态 > 公司新闻 > 供应 ST M29W160ET-70N6L 电源快闪记忆体 供应 ST M29W160ET-70N6L 电源快闪记忆体M29W160ET-70N6L STMicroelectronics - 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash MemorySINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS n ACCESS TIME: 70ns n PROGRAMMING TIME – 10ms per Byte/Word typical n 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks n PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin n ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend n UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming n TEMPORARY BLOCK UNPROTECTION MODE n SECURITY MEMORY BLOCK n LOW POWER CONSUMPTION – Standby and Automatic Standby n 100,000 PROGRAM/ERASE CYCLES per BLOCK n 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year n ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160BT: 22C4h – Bottom Device Code M29W160BB: 2249h  |
