品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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首 页 > 新闻动态 > 公司新闻 > 供应 FAIRCHILD NDC7002N-NL 双N沟道增强模式场效应 供应 FAIRCHILD NDC7002N-NL 双N沟道增强模式场效应FAIRCHILD NDC7002N-NL Fairchild Semiconductor - Dual N-Channel Enhancement Mode Field Effect Features
____________________________________________________________________________________________ Absolute Maximum RatingsTA = 25°C unless otherwise noted Symbol Parameter NDC7002N Units VDSS Drain-Source Voltage 50 V VGSS Gate-Source Voltage - Continuous 20 V ID Drain Current - Continuous (Note 1a) 0.51 A - Pulsed 1.5 PD Maximum Power Dissipation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W NDC7002N.SAM 0.51A, 50V, RDS(ON) = 2W @ VGS=10V High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.  |
