品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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首 页 > 新闻动态 > 公司新闻 > 供应 TOS 2SA1263 进步党硅外延型- 供应 TOS 2SA1263 进步党硅外延型-2SA1263 SILICON PNP TRIPLE DIFFUSED TYPE - Toshiba Semiconductor
Type Designator: 2SA1263 Material of transistor: Si Polarity: pnp Maximum collector power dissipation (Pc): 60W Maximum collector-base voltage (Ucb): 80V Maximum collector-emitter voltage (Uce): 80V Maximum emitter-base voltage (Ueb): 5V Maximum collector current (Ic max): 6A Maximum junction temperature (Tj): 125°C Transition frequency (ft): 30MHz Collector capacitance (Cc), Pf: 290 Forward current transfer ratio (hFE), min/max: 55MIN Manufacturer of 2SA1263 transistor: TOSHIBA Package of 2SA1263 transistor: TO218 Application: Power, Genral Purpose |
