Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description Features
Absolute Maximum Ratings TA = 25°C unless otherwise note
Symbol Parameter FDC655AN Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous (Note 1a) 6.3 A
- Pulsed 20
PD Maximum Power Dissipation (Note 1a) 1.6 W
(Note 1b) 0.8
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
FDC655AN Rev.C
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
6.3 A, 30 V. RDS(ON) = 0.027 W @ VGS = 10 V
RDS(ON) = 0.035 W @ VGS = 4.5 V.
Fast switching.
Low gate charge ( typical 9 nC).
SuperSOTTM-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
