IS93C66A
FEATURES
• Industry-standard Microwire Interface
— Non-volatile data storage
— Wide voltage operation:
Vcc = 1.8V to 5.5V
— Auto increment for efficient data dump
• User Configured Memory Organization
— By 16-bit or by 8-bit
• Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
• Enhanced low voltage CMOS E2PROM
technology
• Versatile, easy-to-use Interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Chip select enables power savings
• Durable and reliable
— 40-year data retention after 1M write cycles
— 1 million write cycles
— Unlimited read cycles
— Schmitt-trigger inputs
• Industrial and Automotive Temperature Grade
• Lead-free available
DESCRIPTION
The IS93C56A/66A are 2kb/4kb non-volatile,
ISSI ® serial EEPROMs. They are fabricated using
an enhanced CMOS design and process. The
IS93C56A/66A contain power-efficient read/write
memory, and organization of either 256/512 bytes
of 8 bits or 128/256 words of 16 bits. When the
ORG pin is connected to Vcc or left unconnected,
x16 is selected; when it is connected to ground,
x8 is selected. The IS93C56A/66A are fully
backward compatible with IS93C56/66.
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the devices are write-enabled.
A selected x8 byte or x16 word can be modified
with a single WRITE or ERASE instruction.
Additionally, the two instructions WRITE ALL or
ERASE ALL can program an entire array. Once a
device begins its self-timed program procedure,
the data out pin (Dout) can indicate the READY/
BUSY status by raising chip select (CS). The selftimed
write cycle includes an automatic erasebefore-
write capability. The devices can output
any number of consecutive bytes/words using a
single READ instruction.
