IS65WV5128DALL
FEATURES
• High-speed access time: 35, 45, 55 ns
• CMOS low power operation
36 mW (typical) operating
9 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
1.65V – 2.2V Vdd (IS62WV5128DALL)
2.3V – 3.6V Vdd (IS62WV5128DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial and Automotive temperature support
• Lead-free available
DESCRIPTION
The ISSI IS62WV5128DALL / IS62WV5128DBLL are
high-speed, 4M bit static RAMs organized as 512K words
by 8 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields highperformance
and low power consumption devices.
When CS1 is HIGH (deselected) the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62WV5128DALL and IS62WV5128DBLL are
packaged in the JEDEC standard 32-pin TSOP (TYPE
I), 32-pin sTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin
SOP and 36-pin mini BGA.
