IS65WV1288DALL
FEATURES
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation:
12 mW (typical) operating
4 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply:
1.65V--2.2V Vdd (62WV1288DALL)
2.3V--3.6V Vdd (62WV1288DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial and automotive temperature support
• Lead-free available
DESCRIPTION
The ISSI IS62/65WV1288DALL and IS62/65WV1288DBLL
are high-speed, 1M bit static RAMs organized as
128K words by 8 bits. It is fabricated using ISSI's highperformance
CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected), the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62/65WV1288DALL and IS62/65WV1288DBLL are
packaged in the JEDEC standard 32-pin TSOP (TYPEI),
sTSOP (TYPEI), SOP, and 36-pin mini BGA.
