IS65WV12816DALL
FEATURES
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.8V ± 10% Vdd (IS62/65WV12816DALL)
– 2.5V--3.6V Vdd (IS62/65WV12816DBLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Autotmovie temperature support
• 2CS Option Available
• Lead-free available
DESCRIPTION
The ISSI IS62/65WV12816DALL/DBLL are high-speed,
2M bit static RAMs organized as 128K words by 16
bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields highperformance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or when CS1 is low , CS2 is high and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62/65WV12816DALL/DBLL are packaged in the
JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-
Pin TSOP (TYPE II).
