IS65WV12816ALL
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation:
36 mW (typical) operating
9 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply:
1.65V to 2.2V VDD (65WV12816ALL)
2.5V to 3.6V VDD (65WV12816BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• 2CS Option Available
• Temperature Offerings:
Option A: 0 to 70oC
Option A1: –40 to +85oC
Option A2: –40 to +105oC
Option A3: –40 to +125oC
• Lead-free available
DESCRIPTION
The ISSI IS65WV12816ALL/ IS65WV12816BLL are highspeed,
2M bit static RAMs organized as 128K words by 16
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields highperformance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS65WV12816ALL and IS65WV12816BLL are packged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
