IS65C51216AL
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 4.5V--5.5V Vdd
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature (-40oC to +125oC)
• Lead-free available
DESCRIPTION
The ISSI IS62C51216AL and IS65C51216AL are highspeed,
8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or when CS1 is low , CS2 is high and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable (WE)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62C51216AL and IS65C51216AL are packaged in
the JEDEC standard 48-pin mini BGA (9mm x 11mm) and
44-Pin TSOP (TYPE II).
